sales@szcinty.com
Product overview
- Part Number
- H4P3K9FZA
- Manufacturer
- TE Connectivity / Holsworthy
- Product Category
- Metal Film Resistors - Through Hole
- Description
- Metal Film Resistors - Through Hole H4P 3K9 1% 100PPM
Documents & Media
- Datasheets
- H4P3K9FZA
Product Attributes
- Diameter :
- 3.7 mm
- Length :
- 10 mm
- Maximum Operating Temperature :
- + 155 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Bulk
- Power Rating :
- 1 W
- Resistance :
- 3.9 kOhms
- Series :
- H4P
- Temperature Coefficient :
- 100 PPM / C
- Termination Style :
- Axial
- Tolerance :
- 1 %
Description
Metal Film Resistors - Through Hole H4P 3K9 1% 100PPM
Price & Procurement
Associated Product
You May Also Be Interested In
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SMX1001MR-M1 | Microchip Technology | 3,000 | PIN Diodes Si PIN Hermetic MELF |
| UM7506F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7002F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7102F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7101F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7504F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7502F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7501F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7104F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7006F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| UM7106F | Microchip Technology | 3,000 | PIN Diodes Si PPIN Hermetic MELF |
| BAR 90-02EL E6327 | Infineon Technologies | 3,000 | PIN Diodes RF DIODES |
| JDP2S02ACT(TPL3) | Toshiba | 3,000 | PIN Diodes Radio-Freq SGL 30V 0.3pF 1 Ohm |
| MPN7453B-T83 | MACOM | 3,000 | PIN Diodes Diode,PIN-Chip-Package, T83 |
| BA679-M-18 | Vishay Semiconductors | 3,000 | PIN Diodes PIN DIODE SOD80 MINIMELF-e2-M |
