Product overview
- Part Number
- 1.5KE8.2A-E3/51
- Manufacturer
- Vishay Semiconductors
- Product Category
- TVS Diodes / ESD Suppressors
- Description
- ESD Suppressors / TVS Diodes 1500W 8.2V Unidirect
Documents & Media
- Datasheets
- 1.5KE8.2A-E3/51
Product Attributes
- Breakdown Voltage :
- 7.79 V
- Clamping Voltage :
- 12.1 V
- Ipp - Peak Pulse Current :
- 124 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Package / Case :
- DO-201-2
- Packaging :
- Bulk
- Polarity :
- Unidirectional
- Pppm - Peak Pulse Power Dissipation :
- 1.5 kW
- Product Type :
- TVS Diodes
- Series :
- 1.5KE
- Termination Style :
- Axial
- Vesd - Voltage ESD Air Gap :
- -
- Vesd - Voltage ESD Contact :
- -
- Working Voltage :
- 7.02 V
Description
ESD Suppressors / TVS Diodes 1500W 8.2V Unidirect
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
BSC028N06LS3GATMA1 | Infineon Technologies | 30,195 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 |
IRFB4227PBF | Infineon Technologies | 3,000 | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg |
FQB47P06TM-AM002 | onsemi / Fairchild | 10,033 | MOSFET 60V P-Channel QFET |
SQP90P06-07L_GE3 | Vishay Semiconductors | 11,574 | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified |
BSC190N15NS3GATMA1 | Infineon Technologies | 856 | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 |
SQM120P04-04L_GE3 | Vishay / Siliconix | 14,686 | MOSFET P-Channel 40V AEC-Q101 Qualified |
SQM120P06-07L_GE3 | Vishay / Siliconix | 64,225 | MOSFET 60 V 120A 375 W AEC-Q101 Qualified |
BSC035N10NS5ATMA1 | Infineon Technologies | 98,440 | MOSFET 100VPower transistor OptiMOS 5 |
BSC014N06NS | Infineon Technologies | 32,312 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS |
BSC014N06NSATMA1 | Infineon Technologies | 9,900 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS |
C3M0350120D | Wolfspeed / Cree | 4,930 | MOSFET Gen 3 1200V 350 mO SiC MOSFET |
FDB3632 | onsemi / Fairchild | 10,262 | MOSFET N-Channel PowerTrench |
SQM120P10_10M1LGE3 | Vishay Semiconductors | 48,441 | MOSFET P Ch -100Vds 20Vgs |
BSC014N06NSTATMA1 | Infineon Technologies | 9,490 | MOSFET TRENCH 40<-<100V |
PSMN4R8-100BSEJ | Nexperia | 25,411 | MOSFET N-channel 100 V 4.8 mo FET |