sales@szcinty.com
Product overview
- Part Number
- HSC2004R7J
- Manufacturer
- TE Connectivity / Holsworthy
- Product Category
- Wirewound Resistors
- Description
- Wirewound Resistors - Chassis Mount HSC200 4R7 5%
Documents & Media
- Datasheets
- HSC2004R7J
Product Attributes
- Height :
- 42 mm
- Length :
- 90 mm
- Packaging :
- Bulk
- Power Rating :
- 200 W
- Resistance :
- 4.7 Ohms
- Series :
- HS
- Temperature Coefficient :
- 50 PPM / C
- Termination Style :
- Solder Lug
- Tolerance :
- 5 %
- Voltage Rating :
- 1.9 kV
- Width :
- 73 mm
Description
Wirewound Resistors - Chassis Mount HSC200 4R7 5%
Price & Procurement
Associated Product
You May Also Be Interested In
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI7415DN-T1-E3 | Vishay Semiconductors | 32,191 | MOSFET -60V Vds 20V Vgs PowerPAK 1212-8 |
| RD3P130SPFRATL | ROHM Semiconductor | 19,946 | MOSFET Pch -100V Vdss -13A TO-252(DPAK); TO-252 |
| DMHT6016LFJ-13 | Diodes Incorporated | 29,000 | MOSFET MOSFET BVDSS: 41V-60V |
| BSZ160N10NS3 G | Infineon Technologies | 109,756 | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 |
| TPH2R608NH,L1Q | Toshiba | 92,484 | MOSFET Power MOSFET N-Channel Single |
| BUK9Y12-100E,115 | Nexperia | 25,500 | MOSFET N-channel TrenchMOS logic level FET |
| CSD19533Q5A | Texas Instruments | 32,470 | MOSFET 100V 7.8mOhm N-CH Pwr MOSFET |
| STD20NF20 | STMicroelectronics | 25,000 | MOSFET Low charge STripFET |
| BSC520N15NS3 G | Infineon Technologies | 23,802 | MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3 |
| FDMC86139P | onsemi / Fairchild | 56,374 | MOSFET PT5 100V/25V Pch Power Trench Mosfet |
| SISS26DN-T1-GE3 | Vishay / Siliconix | 51,108 | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S |
| SI4459ADY-T1-GE3 | Vishay Semiconductors | 21,680 | MOSFET -30V Vds 20V Vgs SO-8 |
| BSC109N10NS3 G | Infineon Technologies | 35,043 | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3 |
| TPH3R70APL,L1Q | Toshiba | 29,179 | MOSFET PWR MOS PD=170W F=1MHZ |
| FDMC510P | onsemi / Fairchild | 51,228 | MOSFET 20V P-Channel PowerTrench MOSFET |
