sales@szcinty.com
Product overview
- Part Number
- D50K2R0E
- Manufacturer
- Ohmite
- Product Category
- Wirewound Resistors
- Description
- Wirewound Resistors - Chassis Mount 50watt 2ohm 10% Tubular Ceramic
Documents & Media
- Datasheets
- D50K2R0E
Product Attributes
- Length :
- 102 mm
- Maximum Operating Temperature :
- + 350 C
- Minimum Operating Temperature :
- + 25 C
- Packaging :
- Bulk
- Power Rating :
- 50 W
- Resistance :
- 2 Ohms
- Series :
- 210
- Temperature Coefficient :
- 260 PPM / C
- Termination Style :
- Solder Lug
- Tolerance :
- 10 %
- Voltage Rating :
- 1.625 kV
- Width :
- 14.3 mm
Description
Wirewound Resistors - Chassis Mount 50watt 2ohm 10% Tubular Ceramic
Price & Procurement
Associated Product
You May Also Be Interested In
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| QPA9901TR13 | Qorvo | 3,000 | RF Amplifier Band 1 0.5W Doherty Small cell PA |
| MD8IC925GNR1 | NXP Semiconductors | 3,000 | RF Amplifier HV8IC 960MHZ TO270WB14G |
| HMC374SC70ETR | Analog Devices Inc. | 3,000 | RF Amplifier lo Noise amp |
| HMC441LH5TR | Analog Devices Inc. | 3,000 | RF Amplifier Medium pow amp SMT, 7.0 - 15.5 GHz |
| RFAM3790TR13 | Qorvo | 3,000 | RF Amplifier 45-1218MHZ GaAs |
| PTMC210204MD-V1-R5 | Wolfspeed / Cree | 3,000 | RF Amplifier Power Amplifier |
| MAX2027EUP+TD | Maxim Integrated | 3,000 | RF Amplifier IF Digitally Controlled Variable-Gain Amplifier |
| HMC952ALP5GETR | Analog Devices Inc. | 3,000 | RF Amplifier 9-13.3GHz 2W POWER AMPLIFIER |
| HMC577LC4BTR-R5 | Analog Devices Inc. | 3,000 | RF Amplifier x2 Active mult SMT, 27 - 31 GHz Fout |
| SKY66184-11 | Skyworks Solutions Inc. | 3,628 | RF Amplifier High Linearity Power Amp -2100-2200 MHz |
| SKY66186-11 | Skyworks Solutions Inc. | 3,000 | RF Amplifier 2.1-2.2GHz SSG 28.6dB |
| QPA5368TR13 | Qorvo | 3,000 | RF Amplifier 300MHz 35dB Return path MCM |
| TGA4534-SM T/R | Qorvo | 3,000 | RF Amplifier 17.7-19.7GHz K-Band Gain 21dB |
| HMC565LC5TR-R5 | Analog Devices Inc. | 3,000 | RF Amplifier lo Noise amp SMT, 6 - 20 GHz |
| A2G22S251-01SR3 | NXP Semiconductors | 3,000 | RF Amplifier Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V |
