Product overview
- Part Number
- TWAA336M015CBYZ0700
- Manufacturer
- Kyocera AVX
- Product Category
- Tantalum Capacitors - Wet
- Description
- Tantalum Capacitors - Wet 15V 33uF Temp200 C ESR=4Ohms 20%
Documents & Media
- Datasheets
- TWAA336M015CBYZ0700
Product Attributes
- Capacitance :
- 33 uF
- Diameter :
- 4.78 mm
- ESR :
- 4 Ohms
- Length :
- 11.51 mm
- Maximum Operating Temperature :
- + 200 C
- Mfr Case Code :
- A Case
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tray
- Series :
- TWA-Y
- Termination Style :
- Axial
- Tolerance :
- 20 %
- Voltage Rating DC :
- 15 VDC
Description
Tantalum Capacitors - Wet 15V 33uF Temp200 C ESR=4Ohms 20%
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
NTMYS5D3N04CTWG | onsemi | 2,451 | MOSFET 40V 5.3 mOhm 71A Single N-Channel |
IPN80R600P7ATMA1 | Infineon Technologies | 2,510 | MOSFET LOW POWER_NEW |
IPD60R280PFD7SAUMA1 | Infineon Technologies | 3,348 | MOSFET CONSUMER |
TK8P65W,RQ | Toshiba | 1,897 | MOSFET PWR MOS PD=80W F=1MHZ |
TK12P50W,RQ | Toshiba | 1,952 | MOSFET PWR MOS PD=100W F=1MHZ |
SI4434ADY-T1-GE3 | Vishay / Siliconix | 4,664 | MOSFET 250V Vds 20V Vgs SO-8 |
RS3G160ATTB1 | ROHM Semiconductor | 3,981 | MOSFET PCH -40V -16A PWR MOSFET |
SIR140DP-T1-RE3 | Vishay Semiconductors | 5,885 | MOSFET 25V Vds 20V Vgs PowerPAK SO-8 |
SIDR390DP-T1-GE3 | Vishay Semiconductors | 3,157 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC |
SIDR390DP-T1-RE3 | Vishay / Siliconix | 5,973 | MOSFET N-CHANNEL 30-V (D-S) MOSFET |
BSC014N04LSTATMA1 | Infineon Technologies | 4,662 | MOSFET TRENCH <= 40V |
TPW2900ENH,L1Q | Toshiba | 1,978 | MOSFET POWER MOSFET TRANSISTOR |
SIDR392DP-T1-GE3 | Vishay Semiconductors | 5,961 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC |
SIDR668DP-T1-GE3 | Vishay Semiconductors | 7,600 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC |
GS-065-004-1-L-TR | GaN Systems | 2,925 | MOSFET 650V, 4A, GaN E-mode, 5x6 PDFN, Bottom-side cooled |