Product overview
- Part Number
- TBJE477K006LRLC0045
- Manufacturer
- Kyocera AVX
- Product Category
- Tantalum Capacitors - Solid SMD
- Description
- Tantalum Capacitors - Solid SMD 470uF 6.3Vdc 10% 2917 7.3x4.3x4.1mm
Documents & Media
- Datasheets
- TBJE477K006LRLC0045
Product Attributes
- Capacitance :
- 470 uF
- Case Code - in :
- 2917
- Case Code - mm :
- 7343
- Height :
- 4.1 mm
- Maximum Operating Temperature :
- + 125 C
- Mfr Case Code :
- E Case
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Reel
- Series :
- TBJ
- Termination Style :
- SMD/SMT
- Tolerance :
- 10 %
- Voltage Rating DC :
- 6.3 VDC
Description
Tantalum Capacitors - Solid SMD 470uF 6.3Vdc 10% 2917 7.3x4.3x4.1mm
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
7130LA20PFG | Renesas / IDT | 65 | SRAM 8K(1KX8)CMOS DUAL PT RAM |
71V124SA12PHG | Renesas / IDT | 275 | SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM |
7134LA25JGI | Renesas / IDT | 48 | SRAM 32K(2KX16)CMOS DUAL PORT |
70V07L35PFGI | Renesas / IDT | 35 | SRAM 32Kx8, 256K, 3.3V DUAL-PORT RAM |
IS61C3216AL-12TLI | ISSI | 135 | SRAM 512K 32Kx16 12ns Async SRAM |
IS62WV25616EBLL-45BLI | ISSI | 478 | SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v~3.6v,48 Ball mBGA (6x8 mm), RoHS |
CY7C1041GE30-10ZSXI | Cypress Semiconductor | 135 | SRAM CMOS RAM W ECC 4-Mbit |
71V016SA12PHG | Renesas / IDT | 540 | SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM |
71016S20PHG | Renesas / IDT | 214 | SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM |
IS61C5128AS-25TLI | ISSI | 234 | SRAM 4M (512Kx8) 25ns Async SRAM |
23A256-I/ST | Microchip Technology | 270 | SRAM 256K 32K X 8 1.7V SERIAL SRAM IND |
7007L15JG | Renesas / IDT | 32 | SRAM 32K X 8K |
IS61WV3216BLL-12TLI | ISSI | 117 | SRAM 512K 32Kx16 12ns Async SRAM 3.3v |
AS7C1024C-12TJIN | Alliance Memory | 230 | SRAM 1M, 5V, 12ns FAST 128K x 8 Asynch SRAM |
71256SA20YGI | Renesas / IDT | 369 | SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM |