Product overview
- Part Number
- 150D106X0006B2BE3
- Manufacturer
- Vishay / Sprague
- Product Category
- Tantalum Capacitors - Solid Leaded
- Description
- Tantalum Capacitors - Solid Leaded 10uF 6volts 20% B case Axial
Documents & Media
- Datasheets
- 150D106X0006B2BE3
Product Attributes
- Capacitance :
- 10 uF
- Diameter :
- 4.7 mm
- Lead Style :
- Straight
- Length :
- 12.04 mm
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Bulk
- Series :
- 150D
- Termination Style :
- Axial
- Tolerance :
- 20 %
- Type :
- Hermetically Sealed
- Voltage Rating DC :
- 6 VDC
Description
Tantalum Capacitors - Solid Leaded 10uF 6volts 20% B case Axial
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
TK35A08N1,S4X | Toshiba | 216 | MOSFET MOSFET NCh 10ohm VGS10V10uAVDS80V |
IPD80R2K8CEATMA1 | Infineon Technologies | 2,500 | MOSFET N-Ch 800V 1.9A DPAK-2 |
TK3P50D,RQ(S | Toshiba | 454 | MOSFET N-Ch MOS 3A 500V 60W 280pF 3 Ohm |
STF5N60M2 | STMicroelectronics | 494 | MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2 |
IPP039N04L G | Infineon Technologies | 474 | MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 |
TK15S04N1L,LQ | Toshiba | 185 | MOSFET 40W 1MHz Automotive; AEC-Q101 |
BSC155N06NDATMA1 | Infineon Technologies | 110 | MOSFET TRENCH 40<-<100V |
RCX300N20 | ROHM Semiconductor | 386 | MOSFET 10V Drive Nch MOSFET |
STP5N95K5 | STMicroelectronics | 881 | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected |
IXTP4N80P | IXYS | 4 | MOSFET 3.5 Amps 800V 3 Rds |
STD15N60DM6 | STMicroelectronics | 21 | MOSFET N-channel 600 V, 286 mOhm typ., 12 A MDmesh DM6 Power MOSFET |
IPP12CN10LGXKSA1 | Infineon Technologies | 524 | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 |
NTMYS1D2N04CLTWG | onsemi | 10 | MOSFET T6 40V LL LFPAK |
TK8A65D(STA4,Q,M) | Toshiba | 117 | MOSFET N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm |
STW7N90K5 | STMicroelectronics | 177 | MOSFET PTD HIGH VOLTAGE |