sales@szcinty.com
Product overview
- Part Number
- TSW-105-16-G-S-RE
- Manufacturer
- Samtec
- Product Category
- Headers & Wire Housings
- Description
- Headers & Wire Housings Classic PCB Header Strips, 0.100 pitch
Documents & Media
- Datasheets
- TSW-105-16-G-S-RE
Product Attributes
- Contact Gender :
- Pin (Male)
- Contact Plating :
- Gold
- Mating Post Length :
- 8.13 mm
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Angle :
- Right Angle
- Mounting Style :
- Through Hole
- Number of Positions :
- 5 Position
- Number of Rows :
- 1 Row
- Packaging :
- Bulk
- Pitch :
- 2.54 mm
- Product :
- Headers
- Series :
- TSW
- Termination Post Length :
- 2.54 mm
- Termination Style :
- Solder Pin
Description
Headers & Wire Housings Classic PCB Header Strips, 0.100 pitch
Price & Procurement
Associated Product
You May Also Be Interested In
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| GS-065-008-1-L-TR | GaN Systems | 3,000 | MOSFET 650V, 8A, GaN E-mode, 5x6 PDFN, Bottom-side cooled |
| IPDQ60R045CFD7XTMA1 | Infineon Technologies | 3,000 | MOSFET HIGH POWER_NEW |
| IPL65R210CFDAUMA2 | Infineon Technologies | 3,000 | MOSFET LOW POWER_LEGACY |
| IQE030N06NM5CGATMA1 | Infineon Technologies | 3,000 | MOSFET TRENCH 40<-<100V |
| IQE030N06NM5ATMA1 | Infineon Technologies | 3,000 | MOSFET TRENCH 40<-<100V |
| SI7894ADP-T1-GE3 | Vishay / Siliconix | 3,000 | MOSFET 30V 25A 5.4W 3.6mohm @ 10V |
| SI7894ADP-T1-E3 | Vishay / Siliconix | 3,000 | MOSFET 30V 25A 1.9W |
| SIE812DF-T1-GE3 | Vishay Semiconductors | 3,000 | MOSFET 40V 163A 125W 2.6mohm @ 10V |
| SIE810DF-T1-GE3 | Vishay / Siliconix | 3,000 | MOSFET 20V 236A 125W 1.4mohm @ 10V |
| SIE812DF-T1-E3 | Vishay / Siliconix | 3,000 | MOSFET 40V 60A 125W 2.6mohm @ 10V |
| SIE810DF-T1-E3 | Vishay Semiconductors | 3,000 | MOSFET 20V 60A 125W 1.4mohm @ 10V |
| BUK962R6-40E,118 | Nexperia | 3,000 | MOSFET N-channel TrenchMOS logic level FET |
| BUK964R2-60E,118 | Nexperia | 3,000 | MOSFET N-CHANNEL TRENCH LOGIC LEVEL |
| BUK969R3-100E,118 | Nexperia | 3,000 | MOSFET N-CHANNEL TRENCH LOGIC LEVEL |
| IXBT2N250-TR | IXYS | 3,000 | MOSFET IXBT2N250 TR |
