Product overview
- Part Number
- TSW-120-09-S-T
- Manufacturer
- Samtec
- Product Category
- Headers & Wire Housings
- Description
- Headers & Wire Housings Classic PCB Header Strips, 0.100 pitch
Documents & Media
- Datasheets
- TSW-120-09-S-T
Product Attributes
- Contact Gender :
- Pin (Male)
- Contact Plating :
- Gold
- Mating Post Length :
- 5.84 mm
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Angle :
- Straight
- Mounting Style :
- Through Hole
- Number of Positions :
- 60 Position
- Number of Rows :
- 3 Row
- Packaging :
- Bulk
- Pitch :
- 2.54 mm
- Product :
- Headers
- Row Spacing :
- 2.54 mm
- Series :
- TSW
- Termination Post Length :
- 10.16 mm
- Termination Style :
- Solder Pin
Description
Headers & Wire Housings Classic PCB Header Strips, 0.100 pitch
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
NVTFS6H860NLTAG | onsemi | 6,000 | MOSFET T8 80V LL U8FL |
ZXMP2120FFTA | Diodes Incorporated | 6,547 | MOSFET 200V P-CHANNEL |
QH8MA4TCR | ROHM Semiconductor | 11,725 | MOSFET Zener Diode, 100mW, 2 Pin. |
CSD87503Q3E | Texas Instruments | 7,368 | MOSFET 30-V Dual N-Channel MOSFET |
ZXMC3AMCTA | Diodes Incorporated | 5,630 | MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS |
SI4835DDY-T1-E3 | Vishay Semiconductors | 5,000 | MOSFET -30V Vds 25V Vgs SO-8 |
NTMFS5C628NLT3G | onsemi | 10,000 | MOSFET TRENCH 6 60V NFET |
DMT10H010LSS-13 | Diodes Incorporated | 2,473 | MOSFET MOSFET BVDSS |
STD13N60DM2 | STMicroelectronics | 2,500 | MOSFET PTD HIGH VOLTAGE |
IRFH8201TRPBF | Infineon Technologies | 8,000 | MOSFET MOSFET N-CH 25V 100A PQFN |
TJ90S04M3L,LQ | Toshiba | 9,860 | MOSFET PWR MOS PD=180W F=1MHZ |
IPD65R660CFDA | Infineon Technologies | 3,818 | MOSFET N-Ch 650V 6A DPAK-2 |
IXTY1R4N120P | IXYS | 2,465 | MOSFET 1.4 Amps 1200V 15 Rds |
IPP020N08N5 | Infineon Technologies | 1,000 | MOSFET N-Ch 80V 120A TO220-3 |
IPW60R040C7XKSA1 | Infineon Technologies | 480 | MOSFET HIGH POWER_NEW |