Product overview

Part Number
HKQ0603U1N1B-T
Manufacturer
Taiyo Yuden
Product Category
Fixed Inductors
Description
Fixed Inductors 0201 1.1nH 70mOhms +/-.1nHTol 850mA HiQ

Documents & Media

Datasheets
HKQ0603U1N1B-T

Product Attributes

Core Material :
Ferrite
Height :
0.33 mm
Inductance :
1.1 nH
Length :
0.6 mm
Maximum DC Current :
850 mA
Maximum DC Resistance :
70 mOhms
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
PCB Mount
Package / Case :
0201 (0603 metric)
Packaging :
Cut Tape, MouseReel, Reel
Product :
RF Inductors
Q Minimum :
14
Self Resonant Frequency :
10 GHz
Series :
HKQ
Shielding :
Unshielded
Termination :
Standard
Termination Style :
SMD/SMT
Tolerance :
0.1 nH
Type :
Multilayer
Width :
0.3 mm

Description

Fixed Inductors 0201 1.1nH 70mOhms +/-.1nHTol 850mA HiQ

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

You May Also Be Interested In

Part Manufacturer Stock Description
MT53E512M16D1FW-046 AIT:D Micron 3,000 DRAM LPDDR4 8G 512MX16 FBGA
MT40A1G16KH-062E AAT:E TR Micron 3,000 DRAM DDR4 16G 1GX16 FBGA
IS41C16257C-35TLI ISSI 3,000 DRAM 4M 5V FastPageMode 35ns, 40 pin TSOP II
MT53E512M16D1FW-046 WT:D Micron 3,000 DRAM LPDDR4 8G 512MX16 FBGA
MT53E256M32D2FW-046 AUT:B Micron 3,000 DRAM LPDDR4 8G 256MX32 FBGA DDP
MT40A2G4SA-062E:R TR Micron 3,000 DRAM DDR4 8G 2GX4 FBGA
MT40A2G8JE-062E AIT:E Micron 3,000 DRAM DDR4 16G 2GX8 FBGA
MT40A2G8JE-062E AUT:E Micron 3,000 DRAM DDR4 16G 2GX8 FBGA
AS4C512M16D3LA-12BCN Alliance Memory 3,000 DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
IS49NLC18320-33B ISSI 3,000 DRAM 576Mbit x18 Common I/O 300MHz Leaded
IS49NLC18320-25B ISSI 3,000 DRAM 576Mbit x18 Common I/O 400MHz Leaded
MT61K256M32JE-19G:T Micron 3,000 DRAM GDDR6 8G 256MX32 FBGA
W948D6FBHX6E Winbond 3,000 DRAM 256Mb LPDDR, x16, 166MHz, 65nm
W988D6FBGX7E Winbond 3,000 DRAM 256Mb LPSDR, x16, 133MHz, 65nm
W948D6FBHX5I Winbond 3,000 DRAM 256Mb LPDDR, x16, 200MHz, Industrial Temp