Documents & Media
- Datasheets
- S-25C320A0I-J8T1U3
Product Attributes
- Memory Size :
- 32 kbit
- Organization :
- 2 k x 16
- Package / Case :
- SOP-8
- Packaging :
- Cut Tape, Reel
- Series :
- S-25C
Description
EEPROM SPI EEPROM, 32KB
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
CSD23381F4 | Texas Instruments | 68,696 | MOSFET 12V P-CH FemtoFET MOSFET |
DMN26D0UT-7 | Diodes Incorporated | 59,500 | MOSFET N-Ch -20V VDSS 230mA 300mW |
RE1L002SNTL | ROHM Semiconductor | 102,000 | MOSFET RECOMMENDED ALT 755-RSM002N06T2L |
DMP3099L-13 | Diodes Incorporated | 176,100 | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A |
BSS138L | onsemi / Fairchild | 299,630 | MOSFET FET 50V 3.5 OHM SOT23 |
BSS123L | onsemi / Fairchild | 236,112 | MOSFET FET 100V 6.0 MOHM SOT23 |
CSD15380F3 | Texas Instruments | 78,000 | MOSFET 20-V, N channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
BSS138K | onsemi / Fairchild | 90,930 | MOSFET 50V NCh Logic Level Enhancement Mode FET |
SI1034CX-T1-GE3 | Vishay Semiconductors | 61,000 | MOSFET 20V Vds 8V Vgs SC89-6 |
DMN61D9U-7 | Diodes Incorporated | 33,000 | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A |
DMN26D0UFB4-7 | Diodes Incorporated | 212,126 | MOSFET ENHANCE MODE MOSFET 20V N-Chan |
BSS84PH6327XTSA2 | Infineon Technologies | 134,354 | MOSFET P-Ch -60V -170mA SOT-23-3 |
DMN55D0UT-7 | Diodes Incorporated | 206,978 | MOSFET .2W 50V .16A |
2N7002DW | onsemi / Fairchild | 121,556 | MOSFET N-Chan Enhancement Mode Field Effect |
BSS123WQ-7-F | Diodes Incorporated | 303,340 | MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA |