Product overview
- Part Number
- 395-044-540-603
- Manufacturer
- EDAC
- Product Category
- Standard Card Edge Connectors
- Description
- Standard Card Edge Connectors .100" (2.54mm) Pitch Card Edge Connector
Documents & Media
- Datasheets
- 395-044-540-603
Product Attributes
- Board Thickness :
- 1.57 mm
- Contact Plating :
- Gold
- Mounting Angle :
- Straight
- Mounting Style :
- Panel
- Number of Positions :
- 44 Position
- Pitch :
- 2.54 mm
Description
Standard Card Edge Connectors .100" (2.54mm) Pitch Card Edge Connector
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
MRFE6VP5300GNR1 | NXP Semiconductors | 3,000 | RF MOSFET Transistors 1.8--600 MHz 300 W CW 50 V |
PTRA095908NB-V1-R2 | Wolfspeed / Cree | 3,000 | RF MOSFET Transistors 520W, Si LDMOS, 48V, 925-960MHz, TO275 |
MMRF1312HR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V |
PTRA087008NB-V1-R2 | Wolfspeed / Cree | 3,000 | RF MOSFET Transistors 700W, Si LDMOS, 48V, 790-820MHz, TO275 |
MMRF1312GSR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V |
A3G18H500-04SR3 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V |
A3G26H350W17SR3 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 59 W Avg., 48 V |
MRF6VP121KHR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors VHV6 1KW 50V NI1230H |
PTRA097008NB-V1-R2 | Wolfspeed / Cree | 3,000 | RF MOSFET Transistors Power Amplifier |
MMRF1007HSR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors MOSFET 965-1215 MHz 1000 W 50 V |
PTRA097058NB-V1-R2 | Wolfspeed / Cree | 3,000 | RF MOSFET Transistors 850W, Si LDMOS 48V, 730-960 MHz, TO288 |
MMRF1317HR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V |
MMRF1317HSR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V |
A3G26H501W17SR3 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 56 W Avg., 48 V |
A2T18H100-25SR3 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V |