Product overview
- Part Number
- Q6025J6TP
- Manufacturer
- Littelfuse
- Product Category
- Triacs
- Description
- Triacs Altnstr 600V 25A Iso 80-80-80 mA
Documents & Media
- Datasheets
- Q6025J6TP
Product Attributes
- Gate Trigger Current - Igt :
- 80 mA
- Gate Trigger Voltage - Vgt :
- 2.5 V
- Holding Current Ih Max :
- 100 mA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Non Repetitive On-State Current :
- 208 A, 250 A
- Off-State Leakage Current @ VDRM IDRM :
- 10 uA
- On-State RMS Current - It RMS :
- 25 A
- On-State Voltage :
- 1.8 V
- Package / Case :
- SMTO-218
- Packaging :
- Tube
- Rated Repetitive Off-State Voltage VDRM :
- 600 V
- Series :
- Qxx25xx
Description
Triacs Altnstr 600V 25A Iso 80-80-80 mA
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
RN1116,LXHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPN Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-416) |
RN1109,LXHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-416) |
RN2503(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased SMV PLN (LF) TRANSISTOR Pd=300mW F=200MHz |
RN2108,LXHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-416) |
RN1113,LXHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=47kO, VCEO=50V, IC=0.1A (SOT-416) |
RN2112,LXHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=22kO, VCEO=-50V, IC=-0.1A (SOT-416) |
RN2404,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=47kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A(SOT-346) |
RN4989(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased PNP BRT SOT-363 |
RN2409,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=47kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-346) |
RN2418,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=-50V, IC=-0.1A (SOT-346) |
DTA123TM3T5G | onsemi | 3,000 | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR |
RN2101MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-723) |
RN1403,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=22kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-346) |
RN2401,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346) |
DTA144TM3T5G | onsemi | 3,000 | Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP |