sales@szcinty.com
Descripción del producto
- Número de parte
- RCE7U2J682J3K1H03B
- Fabricante
- Murata Electronics
- categoria de producto
- Condensadores cerámicos multicapa MLCC - Con plomo
- Descripción
- Multilayer Ceramic Capacitors MLCC - Leaded
Documentos y Medios
- Hojas de datos
- RCE7U2J682J3K1H03B
Atributos del producto
- Capacitance :
- 6800 pF
- Case Style :
- Monolithic
- Dielectric :
- U2J
- Height :
- 5 mm
- Lead Spacing :
- 5 mm
- Length :
- 5.5 mm
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Bulk
- Product :
- Automotive MLCCs
- Qualification :
- AEC-Q200
- Series :
- RCE
- Termination Style :
- Radial
- Tolerance :
- 5 %
- Voltage Rating DC :
- 630 VDC
- Width :
- 4 mm
Descripción
Multilayer Ceramic Capacitors MLCC - Leaded
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
| Parte | Fabricante | Existencias | Descripción |
|---|---|---|---|
| CSD16570Q5BT | Texas Instruments | 19,953 | MOSFET 25V NCH NexFET Pwr MOSFET |
| CSD87350Q5D | Texas Instruments | 21,976 | MOSFET Synch Buck NexFET Power Block |
| SI7489DP-T1-E3 | Vishay Semiconductors | 5,373 | MOSFET -100V Vds 20V Vgs PowerPAK SO-8 |
| SIRA99DP-T1-GE3 | Vishay Semiconductors | 13,677 | MOSFET 30V P-CHANNEL (D-S) |
| FDMS86181 | onsemi / Fairchild | 16,890 | MOSFET 100V/20V N-Chnl Power Trench MOSFET |
| SUP70101EL-GE3 | Vishay Semiconductors | 10,792 | MOSFET -100V Vds 20V Vgs TO-220AB |
| TPW1R306PL,L1Q | Toshiba | 19,980 | MOSFET POWER MOSFET TRANSISTOR PD=170W |
| FDMS3572 | onsemi / Fairchild | 20,883 | MOSFET 80V N-Ch UltraFET PowerTrench MOSFET |
| IPD95R450P7ATMA1 | Infineon Technologies | 17,501 | MOSFET LOW POWER_NEW |
| BSC060N10NS3 G | Infineon Technologies | 22,870 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 |
| CSD19532Q5B | Texas Instruments | 21,555 | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET |
| NVMFS5C604NLWFAFT1G | onsemi | 10,082 | MOSFET T6 60V HEFET |
| TK160F10N1L,LQ | Toshiba | 3,000 | MOSFET U-MOSVIII-H 100V 160A 122nC MOSFET |
| IPD200N15N3GATMA1 | Infineon Technologies | 14,951 | MOSFET TRENCH >=100V |
| SQP100P06-9M3L_GE3 | Vishay Semiconductors | 51,085 | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified |
