sales@szcinty.com
Descripción del producto
- Número de parte
- SIHB22N60ET5-GE3
- Fabricante
- Vishay / Siliconix
- categoria de producto
- MOSFET
- Descripción
- MOSFET 600V Vds E Series D2PAK TO-263
Documentos y Medios
- Hojas de datos
- SIHB22N60ET5-GE3
Atributos del producto
- Id - Continuous Drain Current :
- 21 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Packaging :
- Reel
- Pd - Power Dissipation :
- 227 W
- Qg - Gate Charge :
- 57 nC
- Rds On - Drain-Source Resistance :
- 180 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
Descripción
MOSFET 600V Vds E Series D2PAK TO-263
Precio y Adquisiciones
Producto asociado
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