Descripción del producto

Número de parte
STB12N60DM2AG
Fabricante
STMicroelectronics
categoria de producto
MOSFET
Descripción
MOSFET Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package

Documentos y Medios

Hojas de datos
STB12N60DM2AG

Atributos del producto

Channel Mode :
Enhancement
Id - Continuous Drain Current :
10 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
DPAK-3
Packaging :
Reel
Pd - Power Dissipation :
125 W
Qg - Gate Charge :
14.5 nC
Qualification :
AEC-Q100
Rds On - Drain-Source Resistance :
430 mOhms
Technology :
SI
Tradename :
MDmesh
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs th - Gate-Source Threshold Voltage :
5 V

Descripción

MOSFET Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package

Precio y Adquisiciones

Producto asociado

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