Descripción del producto

Número de parte
RF4E100AJTCR
Fabricante
ROHM Semiconductor
categoria de producto
MOSFET
Descripción
MOSFET Nch 30V 10A Si MOSFET

Documentos y Medios

Hojas de datos
RF4E100AJTCR

Atributos del producto

Channel Mode :
Enhancement
Id - Continuous Drain Current :
10 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
HUML2020L-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
2 W
Qg - Gate Charge :
13 nC
Rds On - Drain-Source Resistance :
9.4 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage :
500 mV

Descripción

MOSFET Nch 30V 10A Si MOSFET

Precio y Adquisiciones

Producto asociado

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  • STMicroelectronics
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