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Descripción del producto
- Número de parte
- CSD18536KTT
- Fabricante
- Texas Instruments
- categoria de producto
- MOSFET
- Descripción
- MOSFET 60-V, N channel NexFET power MOSFET, single D2PAK, 1.6 mOhm 3-DDPAK/TO-263 -55 to 175
Documentos y Medios
- Hojas de datos
- CSD18536KTT
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 200 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 375 W
- Qg - Gate Charge :
- 140 nC
- Rds On - Drain-Source Resistance :
- 1.7 mOhms
- Technology :
- SI
- Tradename :
- NexFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 60 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.8 V
Descripción
MOSFET 60-V, N channel NexFET power MOSFET, single D2PAK, 1.6 mOhm 3-DDPAK/TO-263 -55 to 175
Precio y Adquisiciones
Producto asociado
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