sales@szcinty.com
Descripción del producto
- Número de parte
- SISS23DN-T1-GE3
- Fabricante
- Vishay Semiconductors
- categoria de producto
- MOSFET
- Descripción
- MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
Documentos y Medios
- Hojas de datos
- SISS23DN-T1-GE3
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 50 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PowerPAK-1212-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 57 W
- Qg - Gate Charge :
- 300 nC
- Rds On - Drain-Source Resistance :
- 3.5 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET, PowerPAK
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage :
- 900 mV
Descripción
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
Precio y Adquisiciones
Producto asociado
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