sales@szcinty.com
Descripción del producto
- Número de parte
- FDB16AN08A0
- Fabricante
- onsemi / Fairchild
- categoria de producto
- MOSFET
- Descripción
- MOSFET Discrete Auto N-Ch UltraFET Trench
Documentos y Medios
- Hojas de datos
- FDB16AN08A0
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 58 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 135 W
- Qg - Gate Charge :
- 42 nC
- Rds On - Drain-Source Resistance :
- 13 mOhms
- Technology :
- SI
- Tradename :
- PowerTrench
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 75 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
Descripción
MOSFET Discrete Auto N-Ch UltraFET Trench
Precio y Adquisiciones
Producto asociado
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