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Descripción del producto
- Número de parte
- IPP60R099P7XKSA1
- Fabricante
- Infineon Technologies
- categoria de producto
- MOSFET
- Descripción
- MOSFET HIGH POWER_NEW
Documentos y Medios
- Hojas de datos
- IPP60R099P7XKSA1
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 31 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 117 W
- Qg - Gate Charge :
- 45 nC
- Rds On - Drain-Source Resistance :
- 77 mOhms
- Technology :
- SI
- Tradename :
- CoolMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Descripción
MOSFET HIGH POWER_NEW
Precio y Adquisiciones
Producto asociado
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