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Documentos y Medios
- Hojas de datos
- IXFK230N20T
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 230 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-264-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 1.67 kW
- Qg - Gate Charge :
- 358 nC
- Rds On - Drain-Source Resistance :
- 7.5 mOhms
- Technology :
- SI
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 200 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 5 V
Descripción
MOSFET 230A 200V
Precio y Adquisiciones
Producto asociado
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