Descripción del producto

Número de parte
STD15N60M2-EP
Fabricante
STMicroelectronics
categoria de producto
MOSFET
Descripción
MOSFET PTD HIGH VOLTAGE

Documentos y Medios

Hojas de datos
STD15N60M2-EP

Atributos del producto

Channel Mode :
Enhancement
Id - Continuous Drain Current :
11 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
110 W
Qg - Gate Charge :
17 nC
Rds On - Drain-Source Resistance :
378 mOhms
Technology :
SI
Tradename :
MDmesh
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
2 V

Descripción

MOSFET PTD HIGH VOLTAGE

Precio y Adquisiciones

Producto asociado

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