sales@szcinty.com
Descripción del producto
- Número de parte
- DMN10H170SFDE-7
- Fabricante
- Diodes Incorporated
- categoria de producto
- MOSFET
- Descripción
- MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W
Documentos y Medios
- Hojas de datos
- DMN10H170SFDE-7
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 2.9 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DFN-2020-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2.03 W
- Qg - Gate Charge :
- 9.7 nC
- Rds On - Drain-Source Resistance :
- 160 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
Descripción
MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W
Precio y Adquisiciones
Producto asociado
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