sales@szcinty.com
Descripción del producto
- Número de parte
- IRLD120PBF
- Fabricante
- Vishay Semiconductors
- categoria de producto
- MOSFET
- Descripción
- MOSFET 100V N-CH HEXFET HEXDI
Documentos y Medios
- Hojas de datos
- IRLD120PBF
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 1.3 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- DIP-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 1.3 W
- Qg - Gate Charge :
- 12 nC
- Rds On - Drain-Source Resistance :
- 270 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
Descripción
MOSFET 100V N-CH HEXFET HEXDI
Precio y Adquisiciones
Producto asociado
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