Documentos y Medios
- Hojas de datos
- NTH4L080N120SC1
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 29 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Pd - Power Dissipation :
- 170 W
- Qg - Gate Charge :
- 56 nC
- Rds On - Drain-Source Resistance :
- 110 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs - Gate-Source Voltage :
- - 15 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage :
- 4.3 V
Descripción
MOSFET SIC MOS TO247-4L 80MOHM 1200V
Precio y Adquisiciones
Producto asociado
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