Descripción del producto

Número de parte
NTH4L080N120SC1
Fabricante
onsemi
categoria de producto
MOSFET
Descripción
MOSFET SIC MOS TO247-4L 80MOHM 1200V

Documentos y Medios

Hojas de datos
NTH4L080N120SC1

Atributos del producto

Channel Mode :
Enhancement
Id - Continuous Drain Current :
29 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Pd - Power Dissipation :
170 W
Qg - Gate Charge :
56 nC
Rds On - Drain-Source Resistance :
110 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs - Gate-Source Voltage :
- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
4.3 V

Descripción

MOSFET SIC MOS TO247-4L 80MOHM 1200V

Precio y Adquisiciones

Producto asociado

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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