Documentos y Medios
- Hojas de datos
- NTHC5513T1G
Atributos del producto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3.9 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- ChipFET-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.1 W
- Qg - Gate Charge :
- 4 nC, 6 nC
- Rds On - Drain-Source Resistance :
- 80 mOhms, 155 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 600 mV, 1.2 V
Descripción
MOSFET 20V +3.9A/-3A Complementary
Precio y Adquisiciones
Producto asociado
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