Descripción del producto

Número de parte
APT50GT120JRDQ2
Fabricante
Microsemi / Microchip
categoria de producto
Transistores IGBT
Descripción
IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOP

Documentos y Medios

Hojas de datos
APT50GT120JRDQ2

Atributos del producto

Collector- Emitter Voltage VCEO Max :
1200 V
Configuration :
Single
Continuous Collector Current at 25 C :
72 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Screw Mount
Package / Case :
SOT-227-4
Packaging :
Bulk
Pd - Power Dissipation :
379 W

Descripción

IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOP

Precio y Adquisiciones

Producto asociado

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