sales@szcinty.com
Descripción del producto
- Número de parte
- GT20N135SRA,S1E
- Fabricante
- Toshiba
- categoria de producto
- Transistores IGBT
- Descripción
- IGBT Transistors DISCRET IGBT TRANSTR Vces=1350V Ic=40A
Documentos y Medios
- Hojas de datos
- GT20N135SRA,S1E
Atributos del producto
- Collector- Emitter Voltage VCEO Max :
- 1350 V
- Collector-Emitter Saturation Voltage :
- 2.4 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 40 A
- Maximum Gate Emitter Voltage :
- 25 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 312 W
- Technology :
- SI
Descripción
IGBT Transistors DISCRET IGBT TRANSTR Vces=1350V Ic=40A
Precio y Adquisiciones
Producto asociado
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