sales@szcinty.com
Descripción del producto
- Número de parte
- RGTH80TK65DGC11
- Fabricante
- ROHM Semiconductor
- categoria de producto
- Transistores IGBT
- Descripción
- IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Documentos y Medios
- Hojas de datos
- RGTH80TK65DGC11
Atributos del producto
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.6 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 31 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-3PFM
- Packaging :
- Tube
- Pd - Power Dissipation :
- 66 W
- Technology :
- SI
Descripción
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Precio y Adquisiciones
Producto asociado
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