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APTGT450DA60G

Descripción del producto

Número de parte
APTGT450DA60G
Fabricante
Microsemi / Microchip
categoria de producto
Módulos IGBT
Descripción
IGBT Modules DOR CC6197

Documentos y Medios

Hojas de datos
APTGT450DA60G

Atributos del producto

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.4 V
Configuration :
Single
Continuous Collector Current at 25 C :
550 A
Gate-Emitter Leakage Current :
600 nA
Maximum Operating Temperature :
+ 100 C
Minimum Operating Temperature :
- 40 C
Package / Case :
SP6
Packaging :
Tube
Pd - Power Dissipation :
1.75 kW
Product :
IGBT Silicon Modules

Descripción

IGBT Modules DOR CC6197

Precio y Adquisiciones

Producto asociado

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    XC9572XL-10VQG64C
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    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • XC2C64A-7VQG44I
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  • XC2C512-10FT256I
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