sales@szcinty.com
Descripción del producto
- Número de parte
- NSBC114EPDXV6T1G
- Fabricante
- onsemi
- categoria de producto
- Transistores bipolares - prepolarizados
- Descripción
- Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Documentos y Medios
- Hojas de datos
- NSBC114EPDXV6T1G
Atributos del producto
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Dual
- Continuous Collector Current :
- 0.1 A
- DC Collector/Base Gain hfe Min :
- 35
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-563-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 357 mW
- Peak DC Collector Current :
- 100 mA
- Series :
- NSBC114EPDXV6
- Transistor Polarity :
- PNP
- Typical Input Resistor :
- 10 kOhms
- Typical Resistor Ratio :
- 1
Descripción
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Precio y Adquisiciones
Producto asociado
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