Descripción del producto

Número de parte
2N5337 TIN/LEAD
Fabricante
Central Semiconductor
categoria de producto
Transistores bipolares - BJT
Descripción
Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 6.0Vebo 5.0A 6W

Documentos y Medios

Hojas de datos
2N5337 TIN/LEAD

Atributos del producto

Collector- Base Voltage VCBO :
80 V
Collector- Emitter Voltage VCEO Max :
80 V
Collector-Emitter Saturation Voltage :
0.7 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
30 MHz
Maximum DC Collector Current :
-
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-39-3
Packaging :
Bulk
Pd - Power Dissipation :
6 W
Series :
2N5337
Transistor Polarity :
NPN

Descripción

Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 6.0Vebo 5.0A 6W

Precio y Adquisiciones

Producto asociado

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