Descripción del producto

Número de parte
Jan2N3501/TR
Fabricante
Microchip Technology
categoria de producto
Transistores bipolares - BJT
Descripción
Bipolar Transistors - BJT

Documentos y Medios

Hojas de datos
Jan2N3501/TR

Atributos del producto

Collector- Base Voltage VCBO :
150 V
Collector- Emitter Voltage VCEO Max :
150 V
Collector-Emitter Saturation Voltage :
0.4 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Maximum DC Collector Current :
300 mA
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-39-3
Pd - Power Dissipation :
1 W
Transistor Polarity :
NPN

Descripción

Bipolar Transistors - BJT

Precio y Adquisiciones

Producto asociado

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