Descripción del producto

Número de parte
BFS17NQTA
Fabricante
Diodes Incorporated
categoria de producto
Transistores bipolares - BJT
Descripción
Bipolar Transistors - BJT RF Transistor

Documentos y Medios

Hojas de datos
BFS17NQTA

Atributos del producto

Collector- Base Voltage VCBO :
20 V
Collector- Emitter Voltage VCEO Max :
11 V
Collector-Emitter Saturation Voltage :
0.5 V
Configuration :
Single
Emitter- Base Voltage VEBO :
3 V
Gain Bandwidth Product fT :
3.2 GHz
Maximum DC Collector Current :
50 mA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-23-3
Packaging :
Reel
Pd - Power Dissipation :
350 mW
Qualification :
AEC-Q101
Series :
BFS17
Transistor Polarity :
NPN

Descripción

Bipolar Transistors - BJT RF Transistor

Precio y Adquisiciones

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