Descripción del producto

Número de parte
BC856ALT1G
Fabricante
onsemi
categoria de producto
Transistores bipolares - BJT
Descripción
Bipolar Transistors - BJT 100mA 80V PNP

Documentos y Medios

Hojas de datos
BC856ALT1G

Atributos del producto

Collector- Base Voltage VCBO :
- 80 V
Collector- Emitter Voltage VCEO Max :
- 65 V
Collector-Emitter Saturation Voltage :
- 0.65 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
100 MHz
Maximum DC Collector Current :
0.1 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-23-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
225 mW
Series :
BC856AL
Transistor Polarity :
PNP

Descripción

Bipolar Transistors - BJT 100mA 80V PNP

Precio y Adquisiciones

Producto asociado

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