Descripción del producto

Número de parte
2N4900
Fabricante
Microchip Technology
categoria de producto
Transistores bipolares - BJT
Descripción
Bipolar Transistors - BJT Power BJT

Documentos y Medios

Hojas de datos
2N4900

Atributos del producto

Collector- Base Voltage VCBO :
80 V
Collector- Emitter Voltage VCEO Max :
80 V
Collector-Emitter Saturation Voltage :
1.3 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Maximum DC Collector Current :
1 A
Mounting Style :
Through Hole
Package / Case :
TO-66-2
Packaging :
Tray
Pd - Power Dissipation :
25 W
Transistor Polarity :
PNP

Descripción

Bipolar Transistors - BJT Power BJT

Precio y Adquisiciones

Producto asociado

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