sales@szcinty.com
Descripción del producto
- Número de parte
- 2SB1201S-E
- Fabricante
- onsemi
- categoria de producto
- Transistores bipolares - BJT
- Descripción
- Bipolar Transistors - BJT BIP PNP 2A 50V
Documentos y Medios
- Hojas de datos
- 2SB1201S-E
Atributos del producto
- Collector- Base Voltage VCBO :
- 60 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 150 mV, - 300 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 150 MHz
- Maximum DC Collector Current :
- 4 A, - 4 A
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-251-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 800 MW
- Series :
- 2SB1201
- Transistor Polarity :
- NPN, PNP
Descripción
Bipolar Transistors - BJT BIP PNP 2A 50V
Precio y Adquisiciones
Producto asociado
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