sales@szcinty.com
Descripción del producto
- Número de parte
- SBC847BDW1T3G
- Fabricante
- onsemi
- categoria de producto
- Transistores bipolares - BJT
- Descripción
- Bipolar Transistors - BJT SS GP XSTR NPN 45V
Documentos y Medios
- Hojas de datos
- SBC847BDW1T3G
Atributos del producto
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 45 V
- Collector-Emitter Saturation Voltage :
- 250 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- 100 mA
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 380 mW
- Qualification :
- AEC-Q101
- Series :
- BC847BDW1
- Transistor Polarity :
- NPN
Descripción
Bipolar Transistors - BJT SS GP XSTR NPN 45V
Precio y Adquisiciones
Producto asociado
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