Descripción del producto

Número de parte
ZXTN2011GTA
Fabricante
Diodes Incorporated
categoria de producto
Transistores bipolares - BJT
Descripción
Bipolar Transistors - BJT 100V NPN Med Power

Documentos y Medios

Hojas de datos
ZXTN2011GTA

Atributos del producto

Collector- Base Voltage VCBO :
200 V
Collector- Emitter Voltage VCEO Max :
100 V
Configuration :
Single
Emitter- Base Voltage VEBO :
7 V
Gain Bandwidth Product fT :
130 MHz
Maximum DC Collector Current :
6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-223-4
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
3 W
Series :
ZXTN201
Transistor Polarity :
NPN

Descripción

Bipolar Transistors - BJT 100V NPN Med Power

Precio y Adquisiciones

Producto asociado

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    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
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    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
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    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
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    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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