Descripción del producto
- Número de parte
- 2N5192G
- Fabricante
- onsemi
- categoria de producto
- Transistores bipolares - BJT
- Descripción
- Bipolar Transistors - BJT 4A 80V 40W NPN
Documentos y Medios
- Hojas de datos
- 2N5192G
Atributos del producto
- Collector- Base Voltage VCBO :
- 80 V
- Collector- Emitter Voltage VCEO Max :
- 80 V
- Collector-Emitter Saturation Voltage :
- 1.4 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 2 MHz
- Maximum DC Collector Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-225-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 40 W
- Series :
- 2N5192
- Transistor Polarity :
- NPN
Descripción
Bipolar Transistors - BJT 4A 80V 40W NPN
Precio y Adquisiciones
Producto asociado
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