sales@szcinty.com
Descripción del producto
- Número de parte
- 2N5551TFR
- Fabricante
- onsemi / Fairchild
- categoria de producto
- Transistores bipolares - BJT
- Descripción
- Bipolar Transistors - BJT NPN Transistor General Purpose
Documentos y Medios
- Hojas de datos
- 2N5551TFR
Atributos del producto
- Collector- Base Voltage VCBO :
- 180 V
- Collector- Emitter Voltage VCEO Max :
- 160 V
- Collector-Emitter Saturation Voltage :
- 0.2 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 300 MHz
- Maximum DC Collector Current :
- 0.6 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3 Kinked Lead
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 625 mW
- Series :
- 2N5551
- Transistor Polarity :
- NPN
Descripción
Bipolar Transistors - BJT NPN Transistor General Purpose
Precio y Adquisiciones
Producto asociado
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