Descripción del producto

Número de parte
CRGP2010F12K
Fabricante
TE Connectivity / Holsworthy
categoria de producto
Resistencias de película gruesa - SMD
Descripción
Thick Film Resistors - SMD CRGP 2010 12K 1% SMD Resistor

Documentos y Medios

Hojas de datos
CRGP2010F12K

Atributos del producto

Application :
Commercial Grade
Case Code - in :
2010
Case Code - mm :
5025
Features :
Precision Resistors
Maximum Operating Temperature :
+ 155 C
Minimum Operating Temperature :
- 55 C
Packaging :
Cut Tape, Reel
Power Rating :
1.25 W
Resistance :
12 kOhms
Series :
CRGP
Temperature Coefficient :
100 PPM / C
Tolerance :
1 %
Voltage Rating :
400 V

Descripción

Thick Film Resistors - SMD CRGP 2010 12K 1% SMD Resistor

Precio y Adquisiciones

Producto asociado

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Usted también podría estar interesado en

Parte Fabricante Existencias Descripción
RN1908,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPNx2 BRT, 22kOhm, 47kOhm, 22kOhm, 47kOhm, 50V (SOT-363)
RN1909,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPNx2 BRT, 47kOhm, 22kOhm, 47kOhm, 22kOhm, 50V (SOT-363)
RN1910,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=4.7kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN1906,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=4.7kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN1904,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=47kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN1907,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=10kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN1902,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=10kOhm, R2=10kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN1905,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=2.2kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN1901,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-sym) NPN x 2 , R1=4.7kOhm, R2=4.7kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN1903,LXHF(CT Toshiba 6,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=22kOhm, R2=22kOhm, VCEO=50V, IC=0.1A (SOT-363)
RN2316,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP BRT, 4.7kO, 10kO, -50V, -0.1A (SOT-323)
RN2305,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP BRT, 2.2kO, 47kO, -50V, -0.1A (SOT-323)
RN1313,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN BRT IC:0.1A, Vceo: 50V (SOT-323)
RN2308,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP BRT, 22kO, 47kO, -50V, -0.1A (SOT-323)
RN1303,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPN BRT, 22kOhm, 22kOhm, 50V, 0.1A (SOT-323)