Descripción del producto

Número de parte
JANS1N6151
Fabricante
Microchip Technology
categoria de producto
Diodos TVS / Supresores ESD
Descripción
ESD Suppressors / TVS Diodes Hi Rel TVS

Documentos y Medios

Hojas de datos
JANS1N6151

Atributos del producto

Breakdown Voltage :
22.8 V
Clamping Voltage :
33.3 V
Ipp - Peak Pulse Current :
45 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Package / Case :
C-Package-2
Packaging :
Tray
Polarity :
Bidirectional
Product Type :
TVS Diodes
Termination Style :
Axial
Working Voltage :
18.2 V

Descripción

ESD Suppressors / TVS Diodes Hi Rel TVS

Precio y Adquisiciones

Producto asociado

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Usted también podría estar interesado en

Parte Fabricante Existencias Descripción
IS46TR16256AL-15HBLA1 ISSI 3,000 DRAM Automotive (Tc: -40 to +95C), 4G, 1.35V, DDR3, 256Mx16, 1333MT/s @ 9-9-9, 96 ball BGA (9mm x13mm) RoHS
IS43TR16512S1DL-125KBLI ISSI 3,000 DRAM 8G, 1.35V, DDR3L, 512Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x 13mm) RoHS, IT
IS42S32400F-6BLI-TR ISSI 3,000 DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
MT40A512M8SA-062E:F Micron 3,000 DRAM DDR4 4G 512MX8 FBGA
IS42S32400F-7BLI-TR ISSI 3,000 DRAM 128M, 3.3V, SDRAM, 4Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
W9812G6KH-6I TR Winbond 3,000 DRAM 128Mb SDR SDRAM x16, 166MHz, Ind temp T&R
MT41K256M8DA-125 AUT:K Micron 3,000 DRAM DDR3 2G 256MX8 FBGA
IS43TR16128CL-125KBL-TR ISSI 3,000 DRAM 2G 128Mx16 1600MT/s DDR3L 1.35V
IS42S32800J-7BLI-TR ISSI 3,000 DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
MT46H64M16LFBF-5 AIT:B Micron 3,000 DRAM MOBILE DDR 1G 64MX16 FBGA
AS4C64M16MD2A-25BINTR Alliance Memory 3,000 DRAM 1G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp
IS42S16400J-6BLI-TR ISSI 3,000 DRAM 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R
IS43DR86400E-3DBLI ISSI 3,000 DRAM 512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (8mmx10.5mm) RoHS, IT
IS43TR16256BL-125KBL-TR ISSI 3,000 DRAM 4G, 1.35V, DDR3L, 256Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x13mm) RoHS, T&R
W631GG6NB-15 Winbond 3,000 DRAM 1Gb DDR3 SDRAM, x16, 667MHz