Descripción del producto
- Número de parte
- SMAJ14A-Q
- Fabricante
- Bourns
- categoria de producto
- Diodos TVS / Supresores ESD
- Descripción
- ESD Suppressors / TVS Diodes 14volts 400W 5% Uni-Dir. AEC-Q101
Documentos y Medios
- Hojas de datos
- SMAJ14A-Q
Atributos del producto
- Breakdown Voltage :
- 15.6 V
- Cd - Diode Capacitance :
- -
- Clamping Voltage :
- 23.2 V
- Ipp - Peak Pulse Current :
- 17.2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Package / Case :
- DO-214AC-2
- Packaging :
- Cut Tape, MouseReel, Reel
- Polarity :
- Unidirectional
- Pppm - Peak Pulse Power Dissipation :
- 400 W
- Product Type :
- TVS Diodes
- Qualification :
- AEC-Q101
- Series :
- SMAJ-Q
- Termination Style :
- SMD/SMT
- Vesd - Voltage ESD Air Gap :
- -
- Vesd - Voltage ESD Contact :
- -
- Working Voltage :
- 14 V
Descripción
ESD Suppressors / TVS Diodes 14volts 400W 5% Uni-Dir. AEC-Q101
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
Parte | Fabricante | Existencias | Descripción |
---|---|---|---|
AS7C34096A-10JINTR | Alliance Memory | 3,000 | SRAM 4M, 3.3V, 10ns, FAST 512K x 8 Asynch SRAM |
AS8C401800-QC150N | Alliance Memory | 3,000 | SRAM 4M, 3.3V, 150MHz 256K x 18 Synch SRAM |
IS61WV2568EDBLL-10KLI | ISSI | 3,000 | SRAM 2Mb,High-Speed,Async with ECC,256K x 8,10ns,2.4V-3.6V,36 Pin SOJ (400 mil), RoHS |
AS7C34098A-20JCN | Alliance Memory | 3,000 | SRAM 4M, 3.3V, 20ns, FAST 256K x 16 Asyn SRAM |
AS7C34096A-20TCN | Alliance Memory | 3,000 | SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM |
AS7C4098A-20JCN | Alliance Memory | 3,000 | SRAM 4M, 5V, 20ns, FAST 256K x 16 Asyn SRAM |
AS7C4096A-20TCN | Alliance Memory | 3,000 | SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM |
AS7C34098A-20TCN | Alliance Memory | 3,000 | SRAM 4M, 3.3V, 20ns, FAST 256K x 16 Asyn SRAM |
IS61WV25616EDBLL-8BLI | ISSI | 3,000 | SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM |
IS64WV12816EDBLL-10CTLA3 | ISSI | 3,000 | SRAM 2Mb,High-Speed,Async,128K x 16,8ns/3.3v, or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp, ECC |
AS6C8016B-55ZIN | Alliance Memory | 3,000 | SRAM |
AS6C8016B-45ZIN | Alliance Memory | 3,000 | SRAM |
IS64WV2568EDBLL-10CTLA3 | ISSI | 3,000 | SRAM 2Mb,High-Speed,Async,256K x 8, 8ns/3.3v, or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp, ECC |
IS61LF25618EC-7.5TQLI | ISSI | 3,000 | SRAM 4Mb,Flow-Through,Sync with ECC,256K x 18,7.5ns,3.3v I/O,100 Pin TQFP, RoHS |
IS61LF12836EC-7.5TQLI | ISSI | 3,000 | SRAM 4Mb,Flow-Through,Sync with ECC,128K x 36,7.5ns,3.3v I/O,100 Pin TQFP, RoHS |