Descripción del producto
- Número de parte
- TBJE477K010LBSB0800
- Fabricante
- Kyocera AVX
- categoria de producto
- Capacitores de tantalio - SMD sólido
- Descripción
- Tantalum Capacitors - Solid SMD 470uF 10Vdc 10% 2917 7.3x4.3x4.1mm
Documentos y Medios
- Hojas de datos
- TBJE477K010LBSB0800
Atributos del producto
- Capacitance :
- 0.047 pF
- Case Code - in :
- 2917
- Case Code - mm :
- 7343
- ESR :
- 50 mOhms
- Height :
- 4.1 mm
- Maximum Operating Temperature :
- + 125 C
- Mfr Case Code :
- E Case
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Bulk
- Series :
- TBJ
- Termination Style :
- SMD/SMT
- Tolerance :
- 10 %
- Voltage Rating DC :
- 10 VDC
Descripción
Tantalum Capacitors - Solid SMD 470uF 10Vdc 10% 2917 7.3x4.3x4.1mm
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
Parte | Fabricante | Existencias | Descripción |
---|---|---|---|
GS8644Z18E-200 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 4M x 18 72M |
GS8644Z18E-166 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 4M x 18 72M |
GS864418E-133 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 4M x 18 36M |
GS864418E-200 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 4M x 18 36M |
GS864418E-166 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 4M x 18 36M |
GS8644Z36E-200 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 2M x 36 72M |
70V657S12BF | Renesas / IDT | 3,000 | SRAM 32Kx36 STD-PWR, 3.3V DUAL-PORT RAM |
70V3389S4BF | Renesas / IDT | 3,000 | SRAM 64Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
70V3579S4BF | Renesas / IDT | 3,000 | SRAM 32K X 36 SYNCH DPRAM |
GS816272CC-200 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 256K x 72 18M |
GS816272CC-200V | GSI Technology | 3,000 | SRAM 1.8/2.5V 256K x 72 18M |
GS8162Z72CC-200 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 256K x 72 18M |
GS8162Z72CC-200V | GSI Technology | 3,000 | SRAM 1.8/2.5V 256K x 72 18M |
71V3577S80BGI | Renesas / IDT | 3,000 | SRAM 128Kx36 SYNC 3.3V FLOW-THROUGH SRAM |
71V2546S100BGI | Renesas / IDT | 3,000 | SRAM 4MEG ZBT W/ 2.5V I/O |