sales@szcinty.com
Descripción del producto
- Número de parte
- SMBG100AHE3/52
- Fabricante
- Vishay General Semiconductor
- categoria de producto
- Supresores de descargas electrostáticas (ESD) / Diodos TVS
- Descripción
- ESD Suppressors / TVS Diodes 600W 100V 5% Unidir AEC-Q101 Qualified
Documentos y Medios
- Hojas de datos
- SMBG100AHE3/52
Atributos del producto
- Breakdown Voltage :
- 111 V
- Clamping Voltage :
- 162 V
- Ipp - Peak Pulse Current :
- 3.7 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Package / Case :
- DO-215AA-2
- Packaging :
- Reel
- Polarity :
- Unidirectional
- Pppm - Peak Pulse Power Dissipation :
- 600 W
- Product Type :
- TVS Diodes
- Qualification :
- AEC-Q101
- Series :
- SMBG
- Termination Style :
- SMD/SMT
- Vesd - Voltage ESD Air Gap :
- -
- Vesd - Voltage ESD Contact :
- -
- Working Voltage :
- 100 V
Descripción
ESD Suppressors / TVS Diodes 600W 100V 5% Unidir AEC-Q101 Qualified
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
| Parte | Fabricante | Existencias | Descripción |
|---|---|---|---|
| DDTA143EE-7-F | Diodes Incorporated | 3,000 | Bipolar Transistors - Pre-Biased 150MW 4.7K |
| RN2908FE(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz |
| RN2424(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased 10kohm 10kohm 0.8A SOT-346 50V |
| PDTC114ET-QR | Nexperia | 3,000 | Bipolar Transistors - Pre-Biased PDTC114ET-Q/SOT23/TO-236AB |
| MMUN2140LT1G | onsemi | 3,000 | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR |
| MMUN2138LT1G | onsemi | 3,000 | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR |
| TDTC143Z,LM | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased BRT 0.1A 50V 4.7KOhm / 47KOhm |
| RN1105MFV,L3F(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased 2.2kohm 47kohm 0.1A SOT-723 50V |
| RN1411,LF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased 10kohm 50V 0.1A TO-236MOD |
| RN1311(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10Kohms |
| RN1116MFV(TPL3) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 4.7Kohms x 10Kohms |
| RN1304TE85LF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased X34 Pb-F USM PLN (LF) TRANSISTOR Pd=100mW F=250MHz |
| RN2304,LF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased 47kohm 47kohm 0.1A SOT-323 50V |
| RN1107MFV,L3F(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased 10kohm 47kohm 0.1A SOT-723 50V |
| RN2107MFV,L3F | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 10kohm |
