Descripción del producto
- Número de parte
- 50-CBSA-1.75X3.5X0.5
- Fabricante
- LeaderTech
- categoria de producto
- Juntas, láminas, amortiguadores y blindaje EMI
- Descripción
- EMI Gaskets, Sheets, Absorbers & Shielding 1.75X3.5 SMD RF Shield 2-Piece
Documentos y Medios
- Hojas de datos
- 50-CBSA-1.75X3.5X0.5
Atributos del producto
- Length :
- 88.9 mm
- Mounting Style :
- Through Hole Pin
- Packaging :
- Bulk
- Product :
- Shields
- Product Type :
- EMI Gaskets, Sheets & Absorbers
- Series :
- CBS 50
- Thickness :
- 12.7 mm
- Width :
- 44.45 mm
Descripción
EMI Gaskets, Sheets, Absorbers & Shielding 1.75X3.5 SMD RF Shield 2-Piece
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
Parte | Fabricante | Existencias | Descripción |
---|---|---|---|
RN49A1(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased PNP + NPN BRT SOT-363 |
RN2107MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723) |
DDTB143EU-7-F | Diodes Incorporated | 3,000 | Bipolar Transistors - Pre-Biased 200MW 4.7K |
RN2417,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=10kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346) |
RN1415,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPN Q1BSR=2.2kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-346) |
RN2412,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=22kO, VCEO=-50V, IC=-0.1A (SOT-346) |
RN1965(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz |
RN2969(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz |
DTC044TUBTL | ROHM Semiconductor | 3,000 | Bipolar Transistors - Pre-Biased NPN Digital Transtr w/built in resistors |
RN1417,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPN Q1BSR=10kOhm, Q1BER=4.7kOhm, VCEO=50V, IC=0.1A (SOT-346) |
RN1407,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=10kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) |
RN2963(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz |
RN2106MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723) |
RN1401,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-346) |
RN1410,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=4.7kO, VCEO=50V, IC=0.1A (SOT-346) |