sales@szcinty.com
Descripción del producto
- Número de parte
- 700E2R2DWN3600XJ24
- Fabricante
- ATC / Kyocera AVX
- categoria de producto
- Condensadores RF de silicio/película delgada
- Descripción
- Silicon RF Capacitors / Thin Film
Documentos y Medios
- Hojas de datos
- 700E2R2DWN3600XJ24
Atributos del producto
- Capacitance :
- 2.2 pF
- Case Code - in :
- 3838
- Case Code - mm :
- 9797
- Height :
- 4.32 mm
- Length :
- 9.65 mm
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature Range :
- - 55 C to + 125 C
- Package / Case :
- 3838 (9797 metric)
- Packaging :
- Tray
- Series :
- 700E
- Tolerance :
- 0.5 pF
- Voltage Rating :
- 3.6 kVDC
- Width :
- 9.65 mm
Descripción
Silicon RF Capacitors / Thin Film
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
| Parte | Fabricante | Existencias | Descripción |
|---|---|---|---|
| GS8673ET18BK-625M | GSI Technology | 3,000 | SRAM |
| GS8673EQ36BK-625M | GSI Technology | 3,000 | SRAM |
| GS8673ET36BK-625M | GSI Technology | 3,000 | SRAM |
| CY62126EV30LL-45ZSXAT | Cypress Semiconductor | 3,000 | SRAM 1Mb 3V 45ns 64K x 16 LP SRAM |
| GS8673EQ18BK-625M | GSI Technology | 3,000 | SRAM |
| GS8673ED36BK-625M | GSI Technology | 3,000 | SRAM 1.2/1.5V 2M x 36 72M |
| CY7S1049G30-10VXI | Cypress Semiconductor | 3,000 | SRAM CMOS RAM W ECC 4-Mbit |
| GS81313LQ18GK-600I | GSI Technology | 3,000 | SRAM 1.2/1.25V 8M x 18 144M |
| GS81313LQ36GK-600I | GSI Technology | 3,000 | SRAM 1.2/1.25V 4M x 36 144M |
| 71V632S7PFG8 | Renesas / IDT | 3,000 | SRAM 64Kx32 SYNC 3.3V PIPELINED BURST SRAM |
| CY62146GN30-45ZSXIT | Cypress Semiconductor | 3,000 | SRAM MICROPOWER SRAMS |
| CY62146GN-45ZSXIT | Cypress Semiconductor | 3,000 | SRAM MICROPOWER SRAMS |
| CY62148GN-45ZSXIT | Cypress Semiconductor | 3,000 | SRAM MICROPOWER SRAMS |
| CY62148GN-45SXIT | Cypress Semiconductor | 3,000 | SRAM MICROPOWER SRAMS |
| CY62148GN30-45ZSXIT | Cypress Semiconductor | 3,000 | SRAM MICROPOWER SRAMS |
