Documentos y Medios
- Hojas de datos
- IS42SM32160E-75BL
Atributos del producto
- Access Time :
- 6 ns
- Data Bus Width :
- 32 bit
- Maximum Clock Frequency :
- 133 MHz
- Maximum Operating Temperature :
- + 70 C
- Memory Size :
- 512 Mbit
- Minimum Operating Temperature :
- 0 C
- Mounting Style :
- SMD/SMT
- Organization :
- 16 M x 32
- Package / Case :
- BGA-90
- Packaging :
- Tray
- Series :
- IS42SM32160E
- Supply Current - Max :
- 120 mA
- Supply Voltage - Max :
- 3.6 V
- Supply Voltage - Min :
- 2.7 V
- Type :
- SDRAM Mobile
Descripción
DRAM 512M, 3.3V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
Parte | Fabricante | Existencias | Descripción |
---|---|---|---|
NSVEMD4DXV6T5G | onsemi | 5,204 | Bipolar Transistors - BJT SS SOT563 DUL BRT TR |
BCV61B,235 | Nexperia | 9,709 | Bipolar Transistors - BJT TRANS MATCHED PAIR |
BCV63,215 | Nexperia | 5,799 | Bipolar Transistors - BJT TRANS GP TAPE-7 |
NSVT3946DXV6T1G | onsemi | 3,234 | Bipolar Transistors - BJT SS SOT563 XSTR DUAL 40V |
SNST3904DXV6T5G | onsemi | 1,076 | Bipolar Transistors - BJT SS GP XSTR NPN 40V |
NSVBC114EDXV6T1G | onsemi | 7,914 | Bipolar Transistors - BJT SS SOT563 RSTR XSTR |
BCV61B,215 | Nexperia | 13,669 | Bipolar Transistors - BJT TRANS DOUBLE TAPE-7 |
NSVEMX1DXV6T1G | onsemi | 7,972 | Bipolar Transistors - BJT SS DUAL NPN GEN PURP TSTR |
NSVBC847BLT3G | onsemi | 12,169 | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V |
BCX53-16,135 | Nexperia | 7,609 | Bipolar Transistors - BJT Trans GP BJT PNP 80V 1A 4-Pin(3+Tab) |
PBSS5250THR | Nexperia | 35 | Bipolar Transistors - BJT Bipolar Discretes SOT23 |
2DC4617S-7-F | Diodes Incorporated | 2,184 | Bipolar Transistors - BJT NPN BIPOLAR |
2SC4098T106P | ROHM Semiconductor | 3,079 | Bipolar Transistors - BJT NPN RF AMP |
SBCW33LT1G | onsemi | 2,689 | Bipolar Transistors - BJT SILICON TRANSISTOR PLAST |
UMH4NFHATN | ROHM Semiconductor | 23 | Bipolar Transistors - BJT TRANS DIGITAL NPN+NPN |